Twin domain imaging in topological insulator Bi2Te3 and Bi2Se3 epitaxial thin films by scanning X-ray nanobeam microscopy and electron backscatter diffraction

نویسندگان

  • Dominik Kriegner
  • Petr Harcuba
  • Jozef Veselý
  • Andreas Lesnik
  • Guenther Bauer
  • Gunther Springholz
  • Václav Holý
چکیده

The twin distribution in topological insulators Bi2Te3 and Bi2Se3 was imaged by electron backscatter diffraction (EBSD) and scanning X-ray diffraction microscopy (SXRM). The crystal orientation at the surface, determined by EBSD, is correlated with the surface topography, which shows triangular pyramidal features with edges oriented in two different orientations rotated in the surface plane by 60°. The bulk crystal orientation is mapped out using SXRM by measuring the diffracted X-ray intensity of an asymmetric Bragg peak using a nano-focused X-ray beam scanned over the sample. By comparing bulk- and surface-sensitive measurements of the same area, buried twin domains not visible on the surface are identified. The lateral twin domain size is found to increase with the film thickness.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Nano-structural Characterization of Post-annealed ZnO Thin Films by X-ray Diffraction and Field Emission Scanning Electron Microscopy

ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...

متن کامل

Nano-structural Characterization of Post-annealed ZnO Thin Films by X-ray Diffraction and Field Emission Scanning Electron Microscopy

ZnO thin films were deposited on Si(400) substrates by e-beam evaporation technique, and then post-annealed at different annealing temperatures (200-800°C). Dependence of the crystallographic structure, nano-strain, chemical composition and surface physical Morphology of these layers on annealing temperature were studied. The crystallographic structure of films was studied using X-Ray Diffracti...

متن کامل

Band-Gap Tuning Of Electron Beam Evaporated Cds Thin Films

The effect of evaporation rate on structural, morphological and optical properties of electron beam evaporated CdS thin films have been investigated. CdS thin film deposited by electron beam evaporation method in 12nm/min and 60nm/min evaporation rates on glass substrates. X-ray diffraction, scanning electron microscopy, UV-Vis-NIR spectroscopy and Atomic Force Microscopy were used to character...

متن کامل

Electrical properties of Al 2 O 3 films for TFEL - devices made with Sol - Gel technology

Thin films of Al2O3 have been deposited on ITO-coated glass substrates by a sol-gel dipcoat process. Aluminium isopropoxide (Al(OC3H7)3) was used as the Al source material. X-ray diffraction measurements show that these films are amorphous. Scanning electron microscopy and atomic force microscopy images of the films have revealed a relatively flat surface with no cracks. The dielectric properti...

متن کامل

Fabrication and characterization of (Bi2Te3)0.2(Sb2Te3)0.8 compounds thin films by flash evaporated deposition

Bi2Te3)0.2(Sb2Te3)0.8 compounds thin films on glass substrates are fabricated by a flash evaporated deposition method. In order to enhance the performance of the thin films, annealing in an argon atmosphere is carried out for 1 hour in the temperature range from 200 to 400 C. The structure of the thin films, in terms of homogeneity and crystalline quality, is investigated by means of x-ray mapp...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره 50  شماره 

صفحات  -

تاریخ انتشار 2017