Selective growth of GaN nanodots and nanostripes on 6H-SiC substrates by metal organic vapor phase epitaxy
نویسنده
چکیده
1 Georgia Institute of Technology/GTL UMI 2958 Georgia Tech-CNRS, 2-3 rue Marconi, 57070 Metz, France 2 Laboratoire Matériaux Optiques, Photonique et micro-nano Systèmes – UMR CNRS 7132, Université de Metz et SUPELEC, 2 rue Edouard Belin, 57070 Metz, France 3 Department of Physics, New Jersey Institute of Technology, Newark, New Jersey 07102, USA 4 Laboratoire de Photonique et de Nanostructures – UPR CNRS 20, Route de Nozay, 91460 Marcoussis, France 5 Laboratoire d’Etude des Textures et Application aux Matériaux – UMR CNRS, 7078 Île du Saulcy, 57045 Metz cedex 1, France
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