0.8-V Supply Voltage Deep-Submicrometer Inversion-Mode In0.75Ga0.25As MOSFET

We report the experimental demonstration of deepsubmicrometer inversion-mode In0.75Ga0.25As MOSFETs with ALD high-k Al2O3 as gate dielectric. In this letter, n-channel MOSFETs with 100–200-nm-long gates have been fabricated. At a supply voltage of 0.8 V, the fabricated devices with 200–130-nm-long gates exhibit drain currents of 232–440 μA/μm and transconductances of 538–705 μS/μm. The 100-nm device has a drain current of 801 μA/μm and a transconductance of 940 μS/μm. However, the device cannot be pinched off due to severe short-channel effect. Important scaling metrics, such as on/off current ratio, subthreshold swing, and drain-induced barrier lowering, are presented, and their relations to the short-channel effect are discussed.