Correlation of Electron Diffraction between t-EBSD in the SEM, CBED in the TEM and ACOM using ASTAR in the TEM using GaN Nanowires

Transmission electron backscattered diffraction, t-EBSD, in the scanning electron microscope, SEM, was initially described in 2010 [1]. After slow initial acceptance, the number of publications in which it is used is increasing markedly. Many of the first applications took advantage of the higher resolution of t-EBSD in the study of thin films [2], [3]. More recently it is being used for pre-screening thin films and foils to determine which grains are best oriented to study certain defects in transmission electron microscopy, TEM [4], [5]. A major advantage of using t-EBSD in the SEM to screen thin films is that it is much easier and quicker to map the orientation of large areas of samples than with conventional diffraction techniques in the TEM. Automated crystal orientation mapping, ACOM, using precession electron diffraction, PED, in the TEM [6] offers an alternate approach to mapping the orientation of large sample areas without having to reposition the sample between the SEM and TEM.