Linearity Enhancement Technique for GHz-Band LNA
نویسندگان
چکیده
This paper presents linearity enhancement technique for GHzband low noise amplifier (LNA). To verify this technique, we designed LNA using 0.18-μm BiCMOS process. Linearity is very important parameter for LNA. The MOS-BJT derivative superposition (MBDS) technique is exploited by a parallel LC tank in the emitter of bipolar transistor to reduce the secondorder non-linear coefficient (gm2) related to the enhancement limitation of linearity performance. To adjust the phase of third-order non-linear coefficients of bipolar and MOS transistors, and to improve the linearity characteristics, we use two feedback capacitances in parallel with the base-collector and gate-drain capacitances. The proposed LNA showed excellent IIP3 of 25.2dBm and as compared to conventional results, respectively.
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