Study of Extended Defect Structure Induced by Pulsed Laser Annealing in Implanted Silicon Crystals
نویسنده
چکیده
An analysis of extended defects generated during annealing by pulsed excimer laser radiation in silicon crystals implanted with Ge ions is presented. The investigation was performed by means of two complementary methods: the interference-polarizing microscopy and the Lang X-ray transmission topography. The existence of extended defects was revealed. It has been stated that the distribution of these defects depends on the distribution of the power density in the laser beam cross-section.
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تاریخ انتشار 1999