Energy relaxation time in NbN and YBCO thin films under optical irradiation
نویسندگان
چکیده
For a systematic study of energy relaxation processes in thin NbN and YBCO films on sapphire substrates, a frequency domain technique has been set up and employed. The magnetron sputtered NbN films of 3 nm to 22 nm thickness and pulsed-laser deposited YBCO films with thicknesses between 20 nm and 45 nm were excited by amplitude-modulated optical radiation (λ = 850 nm). The response spectra were analyzed on basis of the two-temperature model of the energy dynamics in the interacting electron and phonon subsystems at quasiequilibrium conditions. An increase of the energy relaxation time with increasing film thickness has been obtained for both NbN and YBCO thin film samples.
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