Chapter 2 . Physics of InAIAs / InGaAs Heterostructure Field - Effect Transistors
نویسنده
چکیده
The goal of this project is to develop InAIAs/InGaAs heterostructure field-effect transistors suitable for millimeter-wave high-power applications. The suitability of this material system for low-noise amplification is now unquestionable. Obtaining a high breakdown voltage is, however, still rather difficult, and it usually comes with severe trade offs. This fact seriously limits the suitability of this material system for high-power millimeter-wave applications.
منابع مشابه
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MetalInsulatorDoped semiconductor FieldEffect Transistors (MIDFETs) in which the InGaAs channel is heavily doped but the InAIAs insulator is undoped were pioneered by del Alamo and Mizutani at NTT Laboratories.1 These devices have been found to display a performance comparable to InAIAs/InGaAs ModulationDoped FETs (MODFETs) of similar gate length. They additionally offer unique benefits not fou...
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