Comparative Parametric Analysis for Stability of 6t and 8t Sram Cell
نویسندگان
چکیده
As the technology is improving , channel length of MOSFET is scaling down. In this environment stability of SRAM becomes the major concern for future technology. Static noise margin (SNM)[1] plays a vital role in stability of SRAM[2]. This paper gives an introduction to the “8T SRAM cell”[3]. It includes the Implementation, characterization and analysis of 8T SRAM cell and its comparison with the conventional 6T SRAM cell[4] for various parameters like read margin, write margin, data retention voltage, temperature and power supply fluctuations and depending upon these analysis we find SNM for 6T and 8T SRAM cell. The tool used for simulation purpose is IC Station by Mentor Graphics using 350nm technology at supply voltage of 2.5volts.
منابع مشابه
12th Int'l Symposium on Quality Electronic Design
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