High-mobility thin InSb films grown by molecular beam epitaxy
نویسندگان
چکیده
The problem of preparing high-mobility thin InSb films is revisited for magnetoresistive and spintronic sensor applications. We introduce a growth process that significantly improves the electrical properties of thin unintentionally doped InSb layers ~60–300 nm! epitaxially grown on GaAs~100! substrates by reducing the density of dislocations within the interfacial layer. The epilayer properties are well described by a differential two-layer model. This model confirms that the contribution of the interface can only be donor-like. Moreover, the electrical properties of the InSb layers change continuously away from the interface up to sample thickness of the order of 1 mm. © 2004 American Institute of Physics. @DOI: 10.1063/1.1748850#
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