Modeling the behavior of amorphous oxide thin film transistors before and after bias stress

Article history: Received 11 January 2012 Received in revised form 27 March 2012 Accepted 25 April 2012 Available online 26 May 2012 0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.04.017 ⇑ Corresponding author. E-mail address: [email protected] (A. Cerdeir In this work we present a procedure for modeling the characteristics of amorphous oxide semiconductor TFTs, including the hump observed in the transfer characteristics after DC stress. It is based on the Universal Method and Extraction Procedure, UMEM, previously applied to other types of TFTs. The compact model and extraction procedure allows determining basic device parameters, which can be used to study the device behavior. 2012 Elsevier Ltd. All rights reserved.