COMPUTER-GENERATED HOLOGRAM ETCHED IN GaAs FOR OPTICAL INTERCONNECTION

the Si-SiO, interface at the moment of injection has a measurable effect on charge trapping and detrapping processes within the oxide. The trapped charge density decreases with increasing p-well bias. The proposed mechanism for this effect is the interaction of hot electrons injected into the conduction band of the SiO, with trapping sites previously formed in the oxide. The effect is significant in that it allows the possibility of the recovery of degraded devices by further electron injection at higher p-well biases, thus extending the operating lifetime of n-MOSFET devices.