Corrigendum: Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices
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منابع مشابه
Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelecronic devices
Applications of ferroelectric materials in modern microelectronics will be greatly encouraged if the thermal incompatibility between inorganic ferroelectrics and semiconductor devices is overcome. Here, solution-processable layers of the most commercial ferroelectric compound ─ morphotrophic phase boundary lead zirconate titanate, namely Pb(Zr0.52Ti0.48)O3 (PZT) ─ are grown on silicon substrate...
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Wetting of the pore walls of porous templates is a simple and convenient method to prepare nanotubes. Ferroelectric lead zirconate titanate and barium titanate nanotubes were fabricated by wetting of porous silicon templates of polymeric precursors. The ferroand piezoelectric properties of an individual ferroelectric either of a PZT or a BaTiO3 nanotube were electrically characterized by measur...
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Wearable nanogenerators are of vital importance to portable energy-harvesting and personal electronics. Here we report a method to synthesize a lead zirconate titanate textile in which nanowires are parallel with each other and a procedure to make it into flexible and wearable nanogenerators. The nanogenerator can generate 6 V output voltage and 45 nA output current, which are large enough to p...
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The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtain...
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This article discusses the results of transmission electron microscopy (TEM)-based characterization of strontium-doped lead zirconate titanate (PSZT) thin films. The thin films were deposited by radio frequency magnetron sputtering at 300 degrees C on gold-coated silicon substrates, which used a 15 nm titanium adhesion layer between the 150 nm thick gold film and (100) silicon. The TEM analysis...
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