Direct determination of the ambipolar diffusion length in strained InxGa1-xAs/InP quantum wells by cathodoluminescence
نویسندگان
چکیده
The ambipolar diffusion length is measured in strained &Gal-&/InP quantum wells for several mole fractions in the interval 0.3 <X <0.8 by cathodoluminescence. The ambipolar diffusion length is found to have a significantly higher value in the lower indium mole fraction samples corresponding to tensile-strained wells. This longer diffusion length for the tensile samples is consistent with results of carrier lifetime experiments by M. C. Wang, K. Kash, C. E. Zah, R. Bhat, and S. L. Chuang [Appl. Phys. Lett. 62, 166 (1993)].
منابع مشابه
A NOVEL TECHNIQUE FOR THE DIRECT DETERMINATION OF CARRIER DIFFUSION LENGTHS IN GaAs/ AlGaAs HETEROSTRUCTURES USING CATHODOLUMINESCENCE
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