Two-Dimensional Quantum-Mechanical Modeling for Strained Silicon Channel of Double-Gate MOSFET
نویسندگان
چکیده
A novel structure of double-gate (DG) NMOSFET, which is formed by a strained silicon (Si) channel by using Si/Si1−xGex/Si, is proposed for the improvement of device characteristics. For analyzing the nano-scale DG MOSFET, a two-dimensional quantum-mechanical (QM) approach for solving the coupled Poisson-Schrödinger equations is reported. The advantages of a strained Si channel of DG MOSFET are discussed in terms of current drive, transconductance and mobility by varying the germanium concentration through our simulator. To analyze the short-channel effects of DG MOSFET, a subthreshold swing, a threshold voltage roll-off and the drain-induced barrier lowering were investigated. The difference in the calculated results between the classical and QM approaches is also demonstrated in this presentation.
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