Vertical Power Semiconductor Devices on Bulk GaN Substrates
نویسنده
چکیده
Power electronics is the interface between an electrical source and a load that can differ in frequency, amplitude, number of phases, and where voltages and currents are converted from one form to another [1]. A power electronics system comprises power semiconductor devices, gate drivers, controller circuits and the like. The power semiconductor components of this system have been well served by silicon (Si) diodes and transistors (FETs, IGBTs). The performance of Si-based power semiconductor devices have improved over the past several decades resulting in tremendous improvements in efficiency, size, weight, and power density of power electronic systems for power supply, solar, wind, motor drive, ship propulsion, rail, and grid applications. However, these devices are approaching the material limits of Si. This has resulted in a rapid expansion of efforts to develop wide-bandgap semiconductor alternatives (SiC, GaN) [2-4].
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15.1 Vertical Power Semiconductor Devices Based on Bulk GaN Substrates
In this extended abstract we discuss vertical power electronic device architectures using low defect density (10 to 10 cm) bulk GaN substrates as the starting material and present recent advances. The avalanche capability and ruggedness of the 0.7mm p-n junction diode are supported by test results demonstrating the diode clamping of a 100たH (8mH) inductive load with an initial current of 10 (1....
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