Variable Threshold Voltage CMOS (VTCMOS) in Series Connected Circuits
نویسندگان
چکیده
ABSTRACT Characteristics of variable threshold voltage CMOS (VTCMOS) in the series connected circuits are investigated by means of device simulation. It is newly found that the performance degradation due to the body effect in series connected circuit is suppressed by utilizing VTCMOS. Lowering the threshold voltage (Vth) enhances the drive current and alleviates the degradation due to the series connected configuration. Therefore, larger body effect factor (γ) results in lower Vth and higher on-current even in the series connected circuits. These characteristics are attributed to the velocity saturation phenomenon which reduces the drain saturation voltage (Vdsat).
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