Electroluminescence from silicon-rich nitride/silicon superlattice structures

Luminescent silicon-rich nitride/silicon superlattice structures SRN/Si-SLs with different silicon concentrations were fabricated by direct magnetron cosputtering deposition. Rapid thermal annealing at 700 °C resulted in the nucleation of small amorphous Si clusters that emit at 800 nm under both optical and electrical excitations. The electrical transport mechanism and the electroluminescence EL of SRN/Si-SLs have been investigated. Devices with low turn-on voltage 6 V have been demonstrated and the EL mechanism has been attributed to bipolar recombination of electron-hole pairs at Si nanoclusters. Our results demonstrate that amorphous Si clusters in SRN/Si-SLs provide a promising route for the fabrication of Si-compatible optical devices. © 2008 American Institute of Physics. DOI: 10.1063/1.3003867