Tailoring Oxide/Silicon Carbide Interfaces: NO Annealing and Beyond
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منابع مشابه
Ordered array of self-assembled SiC nanocrystals fabricated by selective oxide desorption and nanosphere lithography.
We have developed a novel technique based on the selective desorption of an oxide film in order to grow ordered arrays of silicon carbide nanocrystals on a silicon surface. These nanocrystals form as a byproduct of void nucleation in the oxide during the high-temperature vacuum annealing of silicon, a process which normally produces a random distribution of nanocrystals across the silicon surfa...
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