Study of the physical properties with compositional dependence in (Se70Ge30)100-xBix (0<x< 8) glassy semiconductors
نویسندگان
چکیده
In the present paper we have theoretically predicted the physical parameters viz. coordination number, constraints, glass transition temperature, fraction of floppy modes, number of lone pair electrons, bond energy, cohesive energy, heat of atomization, ionicity, metallicity and mean bond energy for (Se70Ge30)100-xBix (0<x<8) glassy alloys. It has been found that average heat of atomization and cohesive energy decreases with Bi content. The glass transition temperature and mean bond energy increases with Bi content up to x=2, further addition of Bi lead to decrease in there values. An attempt has been made to explain the varying trend of various parameters with increasing Bi content. A ternary phase diagram has also been reported to explain the structure of (Se70Ge30)100-xBix (0<x< 8) glassy semiconductors.
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