IN-SITU CHARACTERIZATION OF CARRIER MOBILITY IN FIELD EFFECT TRANSISTOllS
نویسنده
چکیده
The Field Effect Transistor (FET) is today the basic element of Very Large ScaIe Integrated (VLSI) digital systems. FETs are also used in analog circuits for high frequency (microwave) applications. Different types of FETs are the Metal Oxide Semiconductor Field Effect Transistors (MOSFETs), the MEtal Semiconductor Field Effect Transistors (MESFETs) and the MOdulation Doped Field Effect Transistors (MODFETs).
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