Development of Ferroelectric Materials for Memory Applications
نویسنده
چکیده
A detailed investigation on the electrical, structural and fatigue characteristics of thin film ferroelectric memory devices fabricated from potassium nitrate-phase I11 (KN03-111) was conducted at Michigan Technological University under a grant from Ramtron Corporation, Colorado Springs, Colorado. This research involved: (1) fabrication and processing of 16x16 (256 bit) capacitor type memory devices, (ii) electrical characterization i.e., pulse switching (I-t), current-voltage (I-V), capacitance-voltage (C-V) and hysteresis measurements, (iii) structural characterization i.e., inert ion sputter depth profiles by an Auger electron spectrometer, and (iv) fatigue testing i.e., measurement of polarization charge as a function of read/write cycles. From the experimental results, it appears that the fatigue is most probably caused by the trapping of mobile ions at the metal/ferroelectric interfaces. Several undergraduate and two graduate students participated in this investigation and found the research experience very valuable and rewarding.
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