Stimulus generation for RF MEMS switches test application

نویسندگان

  • Mingxin Song
  • Jinghua Yin
  • Zuobao Cao
  • Tong Wu
  • Yu Zhao
  • Zhao Jin
  • Amir Zjajo
چکیده

The sinewave generators based the switched-capacitor (SC) technologies are implemented in transistor level. This analogue sinewave generator consists of two parts: an approximate sinewave generator and a filter. The structure of this generator is robust and easily-controlled, in which an approximate sinewave is firstly generated based on SC circuits and then filter the harmonics. The main advantages of the approach are that both the amplitude and the frequency of the signal can be controlled by a DC input voltage and the clock frequency respectively. The amplitude of the sinewave is 400 mV with SNR of 42.2 dB at a supply voltage of 1.2 V. The settling time of the system is less than 0.5 u and the power is less than 5 mW.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Design and simulation of a RF MEMS shunt capacitive switch with low actuation voltage, low loss and high isolation

According to contact type, RF MEMS switches are generally classified into two categories: Capacitive switches and Metal-to-Metal ones. The capacitive switches are capable to tolerate a higher frequency range and more power than M-to-M switches. This paper presents a cantilever shunt capacitive RF MEMS switch with characteristics such as low trigger voltage, high capacitive ratio, short switchin...

متن کامل

RF MEMS Switch Technology

Commercial Applications Solid state and electromagnetic relay switches are being replaced by MEMS switches due to their lower costs and increased application performance. Some of the benefits of MEMS switches include low power consumption, long life cycle, linearity and increased switching speeds. Applications include highspeed digital channel switching in automated test equipment, filter bank ...

متن کامل

Design and Analysis of FBAR switches for RF Front-End Mobile Terminal

In this paper, an introduction and overview of MEMS technology with a focus on RF applications of MEMS in the design of mobile terminal are presented. Such RF MEMS switches have displayed excellent RF characteristics, including lower insertion loss, higher isolation, zero power consumption, small size and weight and very low intermodulation distortion, and long battery life. It is desirable for...

متن کامل

Understanding and Improving Longevity in RF MEMS Capacitive Switches

This paper discusses issues relating to the reliability and methods for employing high-cycle life testing in capacitive RF MEMS switches. In order to investigate dielectric charging, transient current spectroscopy is used to characterize and model the ingress and egress of charges within the switch insulating layer providing an efficient, powerful tool to investigate various insulating material...

متن کامل

A Mim Capacitor Study of Dielectric Charging for Rf Mems Capacitive Switches

MIM capacitors are considered equally important devices for the assessment of dielectric charging in RF MEMS capacitive switches. Beside the obvious similarities between the down state condition of RF MEMS and MIM capacitors there are also some important differences. The paper aims to introduce a novel approach to the study of dielectric charging in MEMS with the aid of MIM capacitors by combin...

متن کامل

High-cycle Life Testing of Rf Mems Switches (preprint)

RF MEMS capacitive switches capable of orderof-magnitude impedance changes have demonstrated operating lifetimes exceeding 100 billion switching cycles without failure. In situ monitoring of switch characteristics demonstrates no significant degradation in performance and quantifies the charging properties of the switch silicon dioxide film. This demonstration leads credence to the mechanical r...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • IJSPM

دوره 7  شماره 

صفحات  -

تاریخ انتشار 2012