Large-Area Semiconducting Graphene Nanomesh Tailored by Interferometric Lithography
نویسندگان
چکیده
Graphene nanostructures are attracting a great deal of interest because of newly emerging properties originating from quantum confinement effects. We report on using interferometric lithography to fabricate uniform, chip-scale, semiconducting graphene nanomesh (GNM) with sub-10 nm neck widths (smallest edge-to-edge distance between two nanoholes). This approach is based on fast, low-cost, and high-yield lithographic technologies and demonstrates the feasibility of cost-effective development of large-scale semiconducting graphene sheets and devices. The GNM is estimated to have a room temperature energy bandgap of ~30 meV. Raman studies showed that the G band of the GNM experiences a blue shift and broadening compared to pristine graphene, a change which was attributed to quantum confinement and localization effects. A single-layer GNM field effect transistor exhibited promising drive current of ~3.9 μA/μm and ON/OFF current ratios of ~35 at room temperature. The ON/OFF current ratio of the GNM-device displayed distinct temperature dependence with about 24-fold enhancement at 77 K.
منابع مشابه
Graphene nanomesh
Graphene has significant potential for application in electronics, but cannot be used for effective field-effect transistors operating at room temperature because it is a semimetal with a zero bandgap. Processing graphene sheets into nanoribbons with widths of less than 10 nm can open up a bandgap that is large enough for room-temperature transistor operation, but nanoribbon devices often have ...
متن کاملCVD Growth of Large Area Smooth-edged Graphene Nanomesh by Nanosphere Lithography
Current etching routes to process large graphene sheets into nanoscale graphene so as to open up a bandgap tend to produce structures with rough and disordered edges. This leads to detrimental electron scattering and reduces carrier mobility. In this work, we present a novel yet simple direct-growth strategy to yield graphene nanomesh (GNM) on a patterned Cu foil via nanosphere lithography. Ram...
متن کاملHighly stretchable and transparent nanomesh electrodes made by grain boundary lithography.
Foldable photoelectronics and muscle-like transducers require highly stretchable and transparent electrical conductors. Some conducting oxides are transparent, but not stretchable. Carbon nanotube films, graphene sheets and metal-nanowire meshes can be both stretchable and transparent, but their electrical resistances increase steeply with strain <100%. Here we present highly stretchable and tr...
متن کاملInducing and optimizing magnetism in graphene nanomeshes
Using first-principles calculations, we explore the electronic and magnetic properties of graphene nanomesh (GNM), a regular network of large vacancies, produced either by lithography or nanoimprint. When removing an equal number of A and B sites of the graphene bipartite lattice, the nanomesh made mostly of zigzag (armchair) -type edges exhibit antiferromagnetic (spin unpolarized) states. In c...
متن کاملSignificantly reduced thermal conductivity and enhanced thermoelectric properties of single- and bi-layer graphene nanomeshes with sub-10nm neck-width
When graphene is shrunk into ~10 nm scale graphene nanoribbons or nanomesh structures, it is expected that not only electrical properties but also thermal conductivity and thermoelectric property are significantly altered due to the quantum confinement effect and extrinsic phonon-edge scattering. Here, we fabricate large-area, sub10 nm singleand bilayer graphene nanomeshes from block copolymer ...
متن کامل