Processing and Characterization of GaSb/High-k Dielectric Interfaces
نویسندگان
چکیده
The GaSb surface was exposed to various HCl-based chemical treatments in order to prepare it for high-k dielectric integration. The chemical and structural analysis was performed by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The chemical analysis indicates the HCl effectively removes native oxide from GaSb surface and leaves it slightly antimony rich. The structural study reveals that the surface roughness increases upon the reexposure to air after the HCl-based surface treatment. Additional information was obtained from photo-conductance decay (PCD) measurements as well as C-V measurements of metal-Al2O3-GaSb capacitors.
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