Auger photoelectron coincidence studies of the intrinsic and extrinsic processes in the Ga L23M45M45 Auger line of GaAs.

Auger photoelectron coincidence spectroscopy has been used to study the intrinsic and extrinsic satellite contributions to the Ga L»M45M45 Auger line of GaAs. Data have been collected for the Ga L23M45M45 Auger line in coincidence with the 2@3/2 and 2p, /2 photoelectron lines from GaAs. The Ga 2p3/p photoelectron line has also been collected in coincidence with the satellite on the lower kinetic-energy side of the Ga L23M45M4, Auger line. The relative contributions of the intrinsic loss processes is shown to be negligible, as expected, whereas the extrinsic loss function is shown to be a significant consideration when using these lines in quantitative analysis. No evidence is seen for a difFerence in the response of the Ga L23M45M45 final-state terms to the presence of a 31 hole at the surface and at the bulk as has been reported in the literature for the As M45 VV line.