Defect Analysis in La0.7Sr0.3MnO3 Epitaxial Thin Films by Electron Channeling Contrast Imaging (ECCI)
نویسندگان
چکیده
Quantitative analysis of extended defects opens a window to understanding their generation and evolution, as well as their effects on bulk properties. The challenge remains to map and quantify defects with statistical significance, especially over a large scale and nondestructively. Transmission electron microscopy (TEM) is limited to the nanometer scale and is destructive. X-ray diffraction (XRD) provides averages over a large scale and requires significant calibration. Electron channeling contrast imaging (ECCI), however, offers a straightforward and non-destructive way to image extended defects over micron length scales; recent examples include dislocation imaging in semiconductors (GaN) [1] and perovskite oxides (SrTiO3) [2].
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