Extraction of Mosfet Effective Channel Length and Width Based on the Transconductance-to-Current Ratio
نویسندگان
چکیده
This paper presents a very simple methodology for determining the effective channel length and width, which is independent of the determination of the threshold voltage. The procedure is based on measurement of the transconductance-to-current ratio (gm/ID) characteristic of the MOSFET in the linear region, from weak to moderate inversion. For the extraction of both the effective channel length and width, the gm/ID characteristic is determined for several devices of different mask channel lengths and widths, respectively. The methodology of extraction has been applied to devices of 0.35 and 0.18μm CMOS technologies.
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