A Maskless Laser-Write Lithography Processing of Thin-Film Transistors
نویسندگان
چکیده
We report on a fabrication method of the hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) using a maskless laser-write lithography (LWL). Level-to-level alignment with a high accuracy is demonstrated using LWL method. The obtained results show that it is possible to fabricate a-Si:H TFTs using a well-established a-Si:H TFT technology in combination with the maskless lithography. This approach can be extended to very large scale areas.
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