On the Calculation of Quasi-Bound States and Their Impact on Direct Tunneling in CMOS Devices
نویسندگان
چکیده
We study the calculation of quasi-bound states in nMOS inversion channels and their impact on direct tunneling currents through the dielectric layer. For typical device parameters, the gate leakage in inversion is dominated by this tunneling component. However, a strong inaccuracy arises, if the eigenvalues of the closed system are used for the quasi-bound state tunneling current. We propose simple correction functions to the closed-boundary eigenvalues calculated by the triangular approximation which allows to account for both, continuum and quasi-bound state tunneling in an efficient manner.
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