Effect of Phonon Dispersion on Thermal Conduction Across Si/Ge Interfaces
نویسندگان
چکیده
We report finite-volume simulations of the phonon Boltzmann transport equation (BTE) for heat conduction across the heterogeneous interfaces in SiGe superlattices. The diffuse mismatch model incorporating phonon dispersion and polarization is implemented over a wide range of Knudsen numbers. The results indicate that the thermal conductivity of a Si/Ge superlattice is much lower than that of the constitutive bulk materials for superlattice periods in the submicron regime. We report results for effective thermal conductivity of various material volume fractions and superlattice periods. Details of the nonequilibrium energy exchange between optical and acoustic phonons that originate from the mismatch of phonon spectra in silicon and germanium are delineated for the first time. Conditions are identified for which this effect can produce significantly more thermal resistance than that due to boundary scattering of phonons. [DOI: 10.1115/1.4004429]
منابع مشابه
Thermal interface conductance in Si/Ge superlattices by equilibrium molecular dynamics
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. We provide a derivation allowing the calculation of thermal conductance at interfaces by equilibrium molecular dyna...
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