Effect of Ferroelectric Polarization on Ionic Transport and Resistance Degradation in BaTiO3 by PhaseField Approach

نویسندگان

  • Ye Cao
  • Jie Shen
  • Clive Randall
  • Long-Qing Chen
چکیده

We proposed a model to study the resistance degradation behavior of ferroelectric oxides in the presence of ferroelectric spontaneous polarization by combining the phase-field model of ferroelectric domains and nonlinear diffusion equations for ionic/electronic transport. We took into account the nonperiodic boundary conditions for solving the electrochemical transport equations and Ginzburg–Landau equations using the Chebyshev collocation algorithm. We considered a single domain structure relative to a thin film BaTiO3 single crystal orientated to the normal of the electrode plates (Ni) in a single parallel plate capacitor configuration. The capacitor was subjected to a dc bias of 0.5 V either along the polarization direction or opposite to the polarization direction at 25°C. It is shown that the polarization bound charges at the metal/ferroelectric interface play an important role in charge carrier transport and leakage current evolution in BaTiO3 capacitor.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Effect of ferroelectricity on electron transport in Pt/BaTiO3/Pt tunnel junctions.

Based on first-principles calculations, we demonstrate the impact of the electric polarization on electron transport in ferroelectric tunnel junctions (FTJs). Using a Pt/BaTiO3/Pt FTJ as a model system, we show that the polarization of the BaTiO3 barrier leads to a substantial drop in the tunneling conductance due to changes in the electronic structure driven by ferroelectric displacements. We ...

متن کامل

Electric control of spin injection into a ferroelectric semiconductor.

Electric-field control of spin-dependent properties has become one of the most attractive phenomena in modern materials research due to the promise of new device functionalities. One of the paradigms in this approach is to electrically toggle the spin polarization of carriers injected into a semiconductor using ferroelectric polarization as a control parameter. Using first-principles density-fu...

متن کامل

Tunable Schottky Barrier in Photovoltaic BiFeO3 Based Ferroelectric Composite Thin Films

We examine the photo-assisted polarization loop in a BiFeO3 thin film under UV light illumination. BiFeO3 thin film prepared by pulsed laser deposition method onto the BaTiO3 thin film and the polarization behavior has been measured under poling voltage. Our results show the engineered polarization due to controllable schottky barrier under inverse poling voltage. This control on schottky barri...

متن کامل

INTERGRANULAR AND INTERPHASE BOUNDARIES IN MATERIALS First principles study of three-component SrTiO3/BaTiO3/PbTiO3 ferroelectric superlattices

The geometrical, chemical and ferroelectric properties of a new nanoscale short-period three-component SrTiO3/BaTiO3/PbTiO3 perovskite superlattice are investigated using a first principles density functional approach. The study focuses on varying the thickness of each component in the superlattice and determining the resulting lattice distortion and total polarization. Thicknesses of up to thr...

متن کامل

Rapid stability of ferroelectric polarization in the Ca, Ce hybrid doped BaTiO3 ceramics

In this work, we report a rapid stability phenomenon of ferroelectric polarization in the Ca, Ce hybrid doped BaTiO3 ceramics (BCaxT+BTCe8) (x = 10, 20, 24, 30 mol%) prepared by separate doping Ca2+ and Ce4+ ions. Double hysteresis loops are identified in the aged BCaxT+BTCe8 samples; meanwhile, the polarization of these loops present a rapid decrease within very short aging time (about 1 h), a...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2014