Surface photoconductivity of organosilicate glass dielectrics induced by vacuum-ultraviolet radiation
نویسندگان
چکیده
The temporary increase in the electrical surface conductivity of low-k organosilicate glass (SiCOH) during exposure to vacuum-ultraviolet radiation (VUV) is investigated. To measure the photoconductivity, patterned " comb structures " are deposited on dielectric films and exposed to synchrotron radiation in the range of 8–25 eV, which is in the energy range of most plasma vacuum-ultraviolet radiation. The change in photo surface conductivity induced by VUV radiation may be beneficial in limiting charging damage of dielectrics by depleting the plasma-deposited charge.
منابع مشابه
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