Controlled growth of a line defect in graphene and implications for gate-tunable valley filtering
نویسندگان
چکیده
J.-H. Chen,1,2,* G. Autès,3 N. Alem,1,2,† F. Gargiulo,3 A. Gautam,4 M. Linck,4,‡ C. Kisielowski,4 O. V. Yazyev,3 S. G. Louie,1,2 and A. Zettl1,2,§ 1Department of Physics, University of California at Berkeley, Berkeley, California 94720, USA 2Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA 3Institute of Theoretical Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland 4National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA (Received 20 August 2013; revised manuscript received 7 February 2014; published 14 March 2014)
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