Advanced mask aligner lithography: new illumination system.
نویسندگان
چکیده
A new illumination system for mask aligner lithography is presented. The illumination system uses two subsequent microlens-based Köhler integrators. The second Köhler integrator is located in the Fourier plane of the first. The new illumination system uncouples the illumination light from the light source and provides excellent uniformity of the light irradiance and the angular spectrum. Spatial filtering allows to freely shape the angular spectrum to minimize diffraction effects in contact and proximity lithography. Telecentric illumination and ability to precisely control the illumination light allows to introduce resolution enhancement technologies (RET) like customized illumination, optical proximity correction (OPC) and source-mask optimization (SMO) in mask aligner lithography.
منابع مشابه
Half-tone proximity lithography
The half-tone lithography using pixilated chromium masks in a projection stepper is an established technology in microoptics fabrication. However, the projection lithography tool is comparably expensive and the achievable lateral resolution is typically limited. By using pixel diffraction effects, binary and continuous profile lithography with submicron resolution can be installed on a conventi...
متن کاملContact and proximity lithography using 193nm Excimer Laser in Mask Aligner
In this paper we describe the use of an Excimer laser for full-field lithography in a Mask Aligner. The DUV light from the Excimer laser is homogenized by using micro lens based optical integrators instead of a macro lens-array. A simulation of the intensity distribution for 5 μm squares was performed to visualize the diffraction effects and to show the potential of 193 nm illumination. It is d...
متن کاملMask Aligner Process Enhancement by Spatial Filtering
Mask Aligners are used in the Semiconductor Industry to transfer structures with moderate resolution requirements onto substrates. With the casting of the shadow a photochemical reactive resist is exposed. As diffraction appears at the mask structures the exposure wavelength and the proximity gap between mask and wafer influence the quality of the image in the resist. As both parameters are ver...
متن کاملResolution enhancement for advanced mask aligner lithography using phase-shifting photomasks.
The application of the phase-shift method allows a significant resolution enhancement for proximity lithography in mask aligners. Typically a resolution of 3 µm (half-pitch) at a proximity distance of 30 µm is achieved utilizing binary photomasks. By using an alternating aperture phase shift photomask (AAPSM), a resolution of 1.5 µm (half-pitch) for non-periodic lines and spaces pattern was dem...
متن کاملLayer-to-Layer Alignment for Step and Flash Imprint Lithography
The Step and Flash Imprint Lithography (SFIL) process is a low-cost, high-throughput patterning technique with a sub-100 nm resolution capability. Investigation by this group and others indicates that the resolution of replication by imprint lithography is limited only by the size of the structures that can be created on the template. It has also been demonstrated that the SFIL process is capab...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Optics express
دوره 18 20 شماره
صفحات -
تاریخ انتشار 2010