Low Power Band to Band Tunnel Transistors
نویسندگان
چکیده
Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post on servers or to redistribute to lists, requires prior specific permission. As scaling continues, the number of transistors per unit area and power density are both on the rise. A reduction in V dd is highly desirable to reduce power consumption. For MOSFETs however, this would mean scaling the threshold voltage to maintain performance and thereby enhancing the off current and static power consumption since MOSFETs are limited to a swing of 60mV/decade at best. A low voltage transistor that allows V dd scaling to 0.5V and below is highly desirable. In this thesis, gate induced band-to-band tunneling transistors are explored as a low voltage alternative because of their potential to achieve lower than 60mV/decade turn-off. Since BTBT is strongly dependant on the band gap of the semiconductor, moving from Silicon to Germanium to lower band gap materials can help scale V dd. Biaxially strained Si 1-x Ge x based heterostructures can provide ultra low effective band gaps. Strain is used to engineer complimentary Si 1-x Ge x heterostructures with low effective band gap for both N and P type transistors. The design and fabrication of heterostructure based tunnel transistors is explored to help scale V dd to 0.5V and below. Dopant engineering techniques to enhance the electric field are also explored both with simulations and experiments.
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