Multi-gate Mosfet Structures with High-k Dielectric Materials
نویسندگان
چکیده
Multi-gate MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high K dielectric materials as oxide layer at different places in MOSFET structures. One of the most important multigate structure is FinFET which shown better subthreshold swing (SS) and drain-induced barrier lowing (DIBL), which is possible with optimum ratio of gate length to Fin width. In this paper we have discussed the different FinFET structures with use of high K dielectric materials for performance improvement. Also the performance of Fin shaped GAA with gate oxide HfO2 are simulated and compared with conventional gate oxide SiO2 for the same structure. Index term: Silicon-On-Insulator(SOI), SOI FinFET, Bulk FinFET, Punchthrough stopper, Short channel effect, DIBL, Subthreshold Slope, High K dielectric material
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