An Investigation of the Molecules 0 2, CHC13, c —C4F8, C7F14 and HBr by Electron Cyclotron Resonance (ECR) Technique at Energies < 0.4 eV

نویسندگان

  • A. A. Christodoulides
  • E. Schultes
  • R. Schumacher
  • R. N. Schindler
چکیده

Preliminary experiments have shown that helium gas can be considered a good choice to be used in electron cyclotron resonance (ECR) studies, at the same time as a carrier gas and as a source of production of free electrons. An account of destruction of He metastable atoms present in the flowstream is given. Changes in the linewidth with or without the electron scavenger and thermalization of the electrons are discussed. The energy dependence for the electron attachment to the molecules 0 2, CHC13, c — C4F8, C7F14, and HBr is investigated. The energy scale for electron attachment processes in relation to the input microwave power is established for He carrier gas. Such processes can be studied by employing the ECR technique from thermal energies up to 0.4 eV.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Electron attachment to C7F14 and SF6 in a thermally ionized potassium plasma.

Electron attachment to perfluoromethylcyclohexane (C7F14) and sulfur hexafluoride (SF6) is studied in a Q machine which produces a thermally ionized potassium plasma at an electron temperature Te approximately = 0.2 eV (2300 K) . Negative ion formation is observed by Langmuir probe measurements of the reduction in electron density as electrons attach to C7F14 to form C7F14- or to SF6 to produce...

متن کامل

The influence of ion energy, ion flux, and etch ternperature on the electrical and material quality of GaAs etched with an electron cyclotron resonance source

The residual damage incurred to GaAs viaetching with a Cl,/Ar plasma generated by an electron cyclotron resonance (ECR) source was investigated as a function of variations in ion energy, ion flux, and etching temperature. The residual damage and electrical properties of GaAs were strongly influenced by changes in these etching parameters. Lattice damage was incurred in all processing situations...

متن کامل

ion desorption from condensed CD 4 ; C 2 D 2 ; C 2 D 4 ; C 2 D 6 and C 3 D 8 molecules induced by electron impact

The electron stimulated desorption of D anions from deuterated hydrocarbons condensed on a platinum substrate has been studied experimentally. D anion yield functions are reported for incident electron energies ranging from 0 to 20 eV: For each molecule studied, the yield function exhibits a single dissociative attachment resonance at approximately 10 eV: Above 15 eV; a linearly increasing D io...

متن کامل

Investigation of nuclear magnetic resonance (NMR) and Binding Energies Clonidine Drug-Carbon Nano Tube: A Theoretical Study

In this work, we have studied binding of Clonidine drug (C9H9Cl2N3) with zigzag single walled carbonnanotubes (SWCNT) (5, 0) by theoretical methods of theory using Gaussian 09 software package.Binding energies, NMR parameters and HOMO- LUMO Gap energy were calculated. Results frombinding energies indicate that it is possible thermodynamically to bind Clonidine drug to SWCNT.The calculated NMR p...

متن کامل

The structures of c-C4F8 and c-C4F8Â ̄ and the adiabatic electron affinity of c-C4F8

Calculations at the 6311G(dps) level have been used to elucidate the structures of octafl uorocyclobutane c-C4F8 and its negative ion c-C4F8̄ . With no empirical adjustments, we obtain 0.640 eV for the adiabatic electron affi nity of c-C4F8. This may be compared with an experimental value of 0.63 ± 0.05 eV from the FALP method. c-C4F8 has unusual features in that there is an increase in symmetry...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013