Asymmetric nanoscale switching in ferroelectric thin films by scanning force microscopy

Scanning force microscopy ~SFM! has been used to perform nanoscale studies of the switching behavior of Pb~Zr, Ti!O3 thin films via the direct observation of their domain structures. The study revealed a significant asymmetry of a switching pattern which is a function of the voltage polarity and original domain structure of individual grains. The phenomenon of asymmetric switching is attributed ~1! to the presence of an internal built-in electric field at the bottom interface and ~2! to the mechanical stress exerted by the SFM tip. The former effect results in incomplete 180° switching, while the latter effect leads to a 90° rotation of the polarization vector. The resulting shear stress deformation of the grain underneath the tip combined with the applied field effect propels polarization reversal in the adjacent grains. © 2001 American Institute of Physics. @DOI: 10.1063/1.1366644#