Gate-dependent orbital magnetic moments in carbon nanotubes.

نویسندگان

  • T S Jespersen
  • K Grove-Rasmussen
  • K Flensberg
  • J Paaske
  • K Muraki
  • T Fujisawa
  • J Nygård
چکیده

We investigate how the orbital magnetic moments of electron and hole states in a carbon nanotube quantum dot depend on the number of carriers on the dot. Low temperature transport measurements are carried out in a setup where the device can be rotated in an applied magnetic field, thus enabling accurate alignment with the nanotube axis. The field dependence of the level structure is measured by excited state spectroscopy and excellent correspondence with a single-particle calculation is found. In agreement with band structure calculations we find a decrease of the orbital magnetic moment with increasing electron or hole occupation of the dot, with a scale given by the band gap of the nanotube.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

g-tensor control in bent carbon nanotube quantum dots

We demonstrate gate control of the electronic g tensor in single and double quantum dots formed along a bend in a carbon nanotube. From the dependence of the single-dot excitation spectrum on magnetic field magnitude and direction, we extract spin-orbit coupling, valley coupling, and spin and orbital magnetic moments. Gate control of the g tensor is measured using the splitting of the Kondo pea...

متن کامل

Orbital and spin magnetic moments of transforming one-dimensional iron inside metallic and semiconducting carbon nanotubes

Antonio Briones-Leon, Paola Ayala, Xianjie Liu, Kazuhiro Yanagi, Eugen Weschke, Michael Eisterer, Hua Jiang, Hiromichi Kataura, Thomas Pichler and Hidetsugu Shiozawa, Orbital and spin magnetic moments of transforming one-dimensional iron inside metallic and semiconducting carbon nanotubes, 2013, Physical Review B. Condensed Matter and Materials Physics, (87), 19. http://dx.doi.org/10.1103/PhysR...

متن کامل

Quantum dots in carbon nanotubes

In this overview paper, we present low-temperature electronic transport measurements of carbon nanotube quantum dots with a back gate. In a semiconducting tube, charge carriers could be completely depleted. The addition energy and the excitation spectrum have been studied as a function of the number of charges (electrons or holes), one by one. We observe electron–hole symmetry, which is a direc...

متن کامل

The effect of vacancy-induced magnetism on electronic transport in armchair carbon nanotubes.

The influence of local magnetic moment formation around three kinds of vacancies on the electron conduction through metallic single-wall carbon nanotubes is studied by use of the Landauer formalism within the coherent regime. The method is based on the single-band tight-binding Hamiltonian, a surface Green function calculation, and the mean-field Hubbard model. The numerical results show that t...

متن کامل

Electrical Transport in Single-Wall Carbon Nanotubes

We review recent progress in the measurement and understanding of the electrical properties of individual metal and semiconducting single-wall carbon nanotubes. The fundamental scattering mechanisms governing the electrical transport in nanotubes are discussed, along with the properties of p–n and Schottkybarrier junctions in semiconductor tubes. The use of advanced nanotube devices for electro...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Physical review letters

دوره 107 18  شماره 

صفحات  -

تاریخ انتشار 2011