Modeling of deep-submicron silicon-based MISFETs with calcium fluoride dielectric
نویسندگان
چکیده
We model the main characteristics of metalinsulator-silicon field-effect transistors (MISFETs) with different gate insulators using the carrier energy distribution function calculated with a Spherical Harmonics Expansion method. In addition to standard devices with Silicon Dioxide or Oxynitride we study a hypothetical MISFET with a rather new crystalline dielectric-Calcium Fluoride. The real physical parameters of the CaF2/Si tunnel barrier are used in our simulations. The obtained characteristics of the transistors with CaF2 are, in some details, better than those of the devices with traditional oxides. Being a step forward in the context of the industrial implementation of fluorite, this work opens the possibility of simulating the characteristics of different silicon-based devices with crystalline insulators.
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