Chemical vapour deposition of Group Vb metal phosphide thin films
نویسندگان
چکیده
The atmospheric pressure chemical vapour deposition (APCVD) reaction of VCl4 and VOCl3 with cyclohexylphosphine at substrate temperatures of 600 C deposits thin films of amorphous vanadium phosphide. The films are black/gold, hard, chemically resistant and conductive. The APCVD reaction of MCl5 (where M = Nb or Ta) with cyclohexylphosphine at 500 C – 600 C deposits films of crystalline -MP and at 400 C 450 C amorphous films of stoichiometry MP are formed. The MP films are metallic, conductive, adherent and chemically resistant.
منابع مشابه
Synthesis of Boron-Aluminum Nitride Thin Film by Chemical Vapour Deposition Using Gas Bubbler
Boron included aluminium nitride (B-AlN) thin films were synthesized on silicon (Si) substrates through chemical vapour deposition ( CVD ) at 773 K (500 °C). tert-buthylamine (tBuNH2) solution was used as nitrogen source and delivered through gas bubbler. B-AlN thin films were prepared on Si-100 substrates by varying gas mixture ratio of three precursors. The structural properties of the films ...
متن کامل(001)-oriented PbTiO3 ferroelectric thin films grown on by metal-organic chemical vapour deposition
PbTiOs ferroelectric thin films have been prepared on Si (001) by metal-organic chemical vapour deposition. The ai-grown films Were characterized by scanning electmn microscopy, x-ray diffraction and Raman spectroscopy. It is shown that the films were highly (001) oriented and had essentially the same lanice constants as the bulk single crystal. However, the %-grown films were subject to intern...
متن کاملGrowth and Characterization of Thin MoS2 Films by Low- Temperature Chemical Bath Deposition Method
Transition metal dichalcogenide (TMDC) materials are very important inelectronic and optical integrated circuits and their growth is of great importance in thisfield. In this paper we present growth and fabrication of MoS2 (Molibdan DiSulfide)thin films by chemical bath method (CBD). The CBD method of growth makes itpossible to simply grow large area scale of the thin la...
متن کاملProperties of alumina films prepared by metal-organic chemical vapour deposition at atmospheric pressure in the presence of small amounts of water
Thin alumina films were deposited on stainless steel, type AISI 304. The deposition process was carried out in nitrogen with low partial pressures of water (0-2.6 x 10 -2 kPa (0-0.20 mmHg)) by metal-organic chemical vapour deposition (MOCVD) with aluminium-tri-sec-butoxide (ATSB) as the precursor. Also results are presented regarding the alumina deposition in the presence of small amounts of 2-...
متن کاملThe Effect of Thermal Annealing on the Adherence of Al203-Films Deposited by Low-Pressure, Metal-Organic, Chemical-Vapor Deposition on AISI
Thin alumina films, deposited at 280~ by low-pressure, metal-organic, chemical-vapor deposition on stainless steel, type AISI 304, were annealed at 0.17 kPa in a nitrogen atmosphere for 2, 4, and 17 hr at 600, 700, and 800~ The effect of the annealing process on the adhesion of the thin alumina films was studied using a scanning-scratch tester, type SST-IO1, developed by Shimadzu. The best mech...
متن کامل