Luminescence properties of submicron features fabricated by using magnetron reactive ion etching with different sample biases
نویسندگان
چکیده
Deep-etch-defined GaAs/Al0.3Ga0.7As square features of multiquantum well material, with dimensions as small as 160 nm, have been fabricated using magnetron reactive ion etching ~MIE!. Luminescence spectroscopy shows confinement of charge carriers to the features’ center. The effects of rf power and etching time on the luminescence efficiency of these features and its concomitant etch-induced damage are examined. © 1995 American Institute of Physics.
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