An FET Audio Peak Limiter

نویسنده

  • W. Marshall
چکیده

A high-quality peak limiting amplifier is described which uses a p-channel field-effect transistor as the variable gain element.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Benefit of Forced Expiratory Technique for Weak Cough in a Patient with Bulbar Onset Amyotrophic Lateral Sclerosis

The specific purpose of this case study was to investigate whether forced expiratory technique (FET) improves the peak expiratory flow compared to coughing in a 53-year-old man with amyotrophic lateral sclerosis (ALS) who presented with bulbar symptoms. Approximately 12 months after diagnosis, his peak cough flow did not exceed 160 L/min, and cough became ineffective. However, FET could generat...

متن کامل

An Analytical Model for Fringing Capacitance in Double gate Hetero Tunnel FET and Analysis of effect of Traps and Oxide charges on Fringing Capacitance

In this paper fringe capacitance of double hetero gate Tunnel FET has been studied. The physical model for fringe capacitance is derived considering source gate overlap and gate drain non overlap. Inerface trap charge and oxide charges are also introduced under positive bias stress and hot carrier stress and their effect on fringe capacitance is also studied. The fringe capacitance is significa...

متن کامل

Representation of a nanoscale heterostructure dual material gate JL-FET with NDR characteristics

In this paper, we propose a new heterostructure dual material gate junctionless field-effect transistor (H-DMG-JLFET), with negative differential resistance (NDR) characteristic. The drain and channel material are silicon and source material is germanium. The gate electrode near the source is larger. A dual gate material technique is used to achieve upward band bending in order to access n-i-p-...

متن کامل

Graphene and nanowire transistors for cellular interfaces and electrical recording.

Nanowire field-effect transistors (NW-FETs) have been shown to be powerful building blocks for nanoscale bioelectronic interfaces with cells and tissue due to their excellent sensitivity and their capability to form strongly coupled interfaces with cell membranes. Graphene has also been shown to be an attractive building block for nanoscale electronic devices, although little is known about its...

متن کامل

Regional lung clearance during cough and forced expiration technique (FET): effects of flow and viscoelasticity.

BACKGROUND In vitro studies have suggested that both the viscoelastic properties of lung secretions and the peak flow attained during simulated cough influence clearance. This study examines the possible association of the viscoelastic properties of sputum and maximum expiratory flow with measured effectiveness of mucus clearance induced by instructed cough and by forced expiration technique (F...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2008