Deep sub-micron FD-SOI for front-end application

The silico Deep sub - micron FD - SOI for front - end application

confirm benefits of a deep sub-micron FD-SOI and to identify possible issues concerning front-end circuits with the FD-SOI, we have submitted a small design to Oki Electric Industry Co., Ltd. via the multi-chip project service of VDEC, the University of Tokyo. The initial test results and future plans for development are presented.

A Fully Differential Front End Charge Sampling Amplifier for Medical Ultrasound Imaging in 28nm FD-SOI Technology

Stresa, Italy, 25-27 April 2007 FABRICATION OF MEM RESONATORS IN THIN SOI

A simple and fast process for micro-electromechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented in this paper. Thin SOI wafers are important for advanced CMOS technology and thus are evaluated as resonator substrates for future cointegration with CMOS circuitry on a single chip. As the transduction capacitance scales with the resonator thickness, it is imp...

Fabrication of MEMS Resonators in Thin SOI

A simple and fast process for micro-electromechanical (MEM) resonators with deep sub-micron transduction gaps in thin SOI is presented in this paper. Thin SOI wafers are important for advanced CMOS technology and thus are evaluated as resonator substrates for future cointegration with CMOS circuitry on a single chip. As the transduction capacitance scales with the resonator thickness, it is imp...

Performance evaluation of FD-SOI Mosfets for different metal gate work function

FULLY DEPLETED (FD) SILICON ON INSULATOR (SOI) METAL OXIDE FIELD EFFECT TRANSISTOR (MOSFET) IS THE LEADING CONTENDER FOR SUB 65NM REGIME. THIS PAPER PRESENTS A STUDY OF EFFECTS OF WORK FUNCTIONS OF METAL GATE ON THE PERFORMANCE OF FD-SOI MOSFET. SENTAURUS TCAD SIMULATION TOOL IS USED TO INVESTIGATE THE EFFECT OF WORK FUNCTION OF GATES ON THE PERFORMANCE FD-SOI MOSFET. SPECIFIC CHANNEL LENGTH OF...