Isochronal annealing studies of n-type 6H-SiC with positron lifetime spectroscopy
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منابع مشابه
Measurements of positron lifetime and hydrogen solubility were made in deformed polycrystalline Pd to investigate thermally-activated recovery. A strong correlation as a function of isochronal annealing temperature was observed between trapped-positron lifetime and the enhancement of hydrogen solubility
Measurements of positron lifetime and hydrogen solubility were made in deformed polycrystalline Pd to investigate thermally-activated recovery. A strong correlation as a function of isochronal annealing temperature was observed between trapped-positron lifetime and the enhancement of hydrogen solubility due to solute binding at dislocations. This correlation is attributed to the simultaneous re...
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We investigated the effect of annealing in a hydrogen atmosphere on carbon nanocap formation during decomposition of a 6H-SiC(000-1) surface. It was determined that native oxides were reduced to below the detection limit of X-ray photoelectron spectroscopy after 30 min of annealing at 1200 degrees C in a hydrogen atomosphere at 10(-3) Pa. In addition, we found that the homogeneity of carbon nan...
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Scanning tunneling microscopy and spectroscopy has been used to study the electronic states of oxidized 6H-SiC interfaces. The SiC surfaces were oxidized by annealing in an ultra-high vacuum chamber at 600−800oC under 1×10 Torr pressure of molecular oxygen. Tunneling spectra revealed two dominant states at –1.8 and 1.5 eV relative to the Fermi level, which lie outside the band gap region but ar...
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Positron annihilation lifetime spectroscopy method with valuation of non-destructive investigation of material, provides information about electron density, defect concentration, type of defects and atoms around the defects. The stability of the system was tested with a source. The time resolution of the whole system has been derived about 365 ps at FWHM. Then n- and p-type silicon samples we...
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We report on highly resolved core-level and valence-band photoemission spectroscopies of hydrogenated, unreconstructed 6H-SiC(0001) and (0001̄) using synchrotron radiation. In the C 1s core level spectra of 6H-SiC(0001̄) a chemically shifted surface component due to C-H bonds is observed at a binding energy (0.4760.02) eV higher than that of the bulk line. The Si 2p core-level spectra of SiC(0001...
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