Correlations between spatially resolved Raman shifts and dislocation density in GaN films
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چکیده
منابع مشابه
Increased thermal conductivity of free-standing low-dislocation-density GaN films
1 Introduction GaN-based wide-band gap materials continue to attract significant attention as promising candidates for the next generation of microwave communication systems and optoelectronic devices [1–3]. For all envisioned applications of GaN materials, it is important to effectively remove the generated heat. Thus, the thermal conductivity K value of GaN is a very important characteristic....
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