Quantitative Analysis of Microsegregation in the Faceted and Non-Faceted Czochralski Silicon Crystal Growth
نویسنده
چکیده
The microsegregation behaviour of antimony in the faceted and non-faceted Czochralski silicon crystal growth was analyzed quantitatively. Using small melt heights and no rotation, dopant striations of various small spacings were eliminated. Interface demarcation and spreading resistance measurements were used for the segregation analysis. The dopant concentration and its fluctuation during the faceted growth were both higher than during non-faceted growth. On the other hand, fluctuations of the microscopic growth rate were about the same in magnitude and periodicity in the two growth regions.
منابع مشابه
Three-dimensional numerical simulation of temperature and flow fields in a Czochralski growth of germanium
For a Czochralski growth of Ge crystal, thermal fields have been analysed numerically using the three-dimensional finite volume method (FLUENT package). The arrangement used in a real Czochralski crystal growth lab included a graphite crucible, heat shield, heating device, thermal insulation and chamber including two gas outlets. We have considered two cases for calculations, which are configur...
متن کاملPhysically Derived Rules for Simulating Faceted Crystal Growth using Cellular Automata
We derive a set of algorithms for simulating the diffusion-limited growth of faceted crystals using local cellular automata. This technique has been shown to work well in reproducing realistic crystal morphologies, and the present work provides a more rigorous physical foundation that connects the numerical code to the physics of attachment kinetics and diffusion dynamics. We then apply these a...
متن کاملProcessing Of Al-Cu-Fe Single Grains
The phase equilibria of the Al-Cu-Fe quasicrystalline phase (y phase) is complex and conventional crystal growth techniques like the Bridgman and Czochralski methods are not applicable in preparation of large crystals. Large single grains of the y phase been have prepared by either slow cooling or isothermal anneals. In the later technique, arc melted ingots were subjected to either single or m...
متن کاملAn Experimental Apparatus for Observing Deterministic Structure Formation in Plate-on-Pedestal Ice Crystal Growth
We describe an experimental apparatus for making detailed morphological observations of the growth of isolated plate-like ice crystals from water vapor. Each crystal develops a plate-on-pedestal (POP) geometry, in which a large, thin, plate-like crystal grows out from the top edge of an initially prismatic seed crystal resting on a substrate. With the POP geometry, the substrate is not in conta...
متن کاملDevelopment of Crystal Growth Technique of Silicon by the Czochralski Method
We report on the Czochralski method for single silicon crystal growth and discuss heat and mass transfer and defect formation in the crystal. A re ector was used for separation of the heating and cooling areas in the furnace enabling us to speed up crystal growth. The melt ow to stabilize the temperature distribution in a crucible was controlled using transverse magnetic elds in a large-scale s...
متن کامل