Leakage Power Reduction in CMOS

نویسندگان

  • Ruchika Mittal
  • Sarita Bajaj
چکیده

The advantage of scaling devices is to achieve high performance, low power, large integration and low cost continues to be attractive to the semiconductor industries. However, increasing variability in the device characteristics, soft errors and device degradation in CMOS technologies pose major challenges in the future scaling. Variation in process, voltage and temperature cause uncertainty in the worst case critical path delays. Delay Margins or Voltage Margins are added to obtain fully functional chips, but results in high power consumption and/or performance loss. In electronics, a flip-flop or latch is a circuit that has two stable states and can be used to store state information. The circuit can be made to change state by signals applied to one or more control inputs and will have one or two outputs. It is the basic storage element in sequential logic. Flip-flops and latches are a fundamental building block of digital electronics systems used in computers, communications, and many other types of systems. In VLSI systems, the clock system consumes anywhere between 20-50% of the total chip power with approximately 90% of the clocking power used to drive storage elements such as flip-flops. The significant power consumption of the clock system is mainly due to the 100% transition probability of the clock

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Leakage Power Reduction Through Hybrid Multi-Threshold CMOS Stack Technique In Power Gating Switch

In this paper Two Hybrid digital circuit design techniques are produced as Hybrid MultiThreshold CMOS complete stack technique and Hybrid Multi-Threshold CMOS partial stack technique for reducing the leakage power dissipation in mode transistion.Tri-modal switch are performance depends on these two techniques reduce the leakage power dissipation. These technique are implemented in the CADENCE v...

متن کامل

Leakage Current Mechanisms and Leakage Reduction Techniques in Deep-Submicrometer CMOS Circuits

High leakage current in deep-submicrometer regimes is becoming a significant contributor to power dissipation of CMOS circuits as threshold voltage, channel length, and gate oxide thickness are reduced. Consequently, the identification and modeling of different leakage components is very important for estimation and reduction of leakage power, especially for low-power applications. This paper r...

متن کامل

Low Power Sram Cell of Leakage Current and Leakage Power Reduction K.venugopal P.sireesh Babu

A SRAM cell must meet requirements for operation in submicron. As the density of SRAM increases, the leakage power has become a significant component in chip design. The power Consumption is a major issue of today's CMOS Technology. Leakage power is major issue for short channel devices. As the technology is shrinking the leakage current is increasing very fast. so, several methods and techniqu...

متن کامل

Galeorstack- A Novel Leakage Reduction Technique for Low Power VLSI Design

Leakage power consumption plays a significant role in current CMOS technology. International Technology Roadmap for semiconductors reports that leakage power consumption dominates the total chip power consumption as technology advances to nano scale. Most of the battery operated applications such as cell phones, Laptops etc requires a longer battery life, which can be made possible by controlli...

متن کامل

Leakage in Nanometer Scale CMOS Circuits

High leakage current in deep sub-micron regimes is a significant contributor to the power dissipation of CMOS circuits as the CMOS technology scales down. Consequently, the identification and modeling of different leakage components is very important for estimation and reduction of leakage power, especially for low power applications. . This paper explores transistor leakage mechanisms and devi...

متن کامل

A Literature Review on Leakage and Power Reduction Techniques in CMOS VLSI Design

A rapid growth in semiconductor technology and increasing demand for portable devices powered up by battery has led the manufacturers to scale down the feature size, resulting reduced threshold voltage and thereby enabling integration of extremely complex functionality on a single chip. In CMOS circuits, increased sub-threshold leakage current refers static power dissipation is the result of lo...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013