Thermal stability of rare-earth based ultrathin Lu2O3 for high-k dielectrics
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چکیده
منابع مشابه
Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs
We report detailed current-transport studies of ultrathin Al2O3 dielectrics on GaAs grown by atomic layer deposition (ALD) as a function of film thickness, ambient temperature and electric field. The leakage current in ultrathin Al2O3 on GaAs is comparable to or even lower than that of the state-of-the-art SiO2 on Si, not counting on high dielectric constant for Al2O3. By measuring leakage curr...
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